Monolithic integration of InAs-based quantum cascade lasers on germanium

K. Kinjalk; A. Gilbert; A. Remis; Z. Loghmari; L. Cerutti; M. Bahriz; R. Teissier; A. N. Baranov; J.-B. Rodriguez; E. Tournié

doi:10.1117/12.2649886

13 March 2023 Monolithic integration of InAs-based quantum cascade lasers on germanium

K. Kinjalk, A. Gilbert, A. Remis, Z. Loghmari, L. Cerutti, M. Bahriz, R. Teissier, A. N. Baranov, J.-B. Rodriguez, E. Tournié

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Proceedings Volume 12426, Silicon Photonics XVIII; 1242606 (2023) https://doi.org/10.1117/12.2649886
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Silicon photonics can have a major impact on the advancement of mid-IR photonics by leveraging the mature and reliable high-volume fabrication technologies already developed for microelectronic integrated circuits. Germanium, already used in silicon photonics, is a promising material for increasing the operating wavelength of Group-IV-based photonic integrated circuits beyond 8 μm and potentially up to 15 μm. High-performance InAs-based quantum cascade lasers grown on Si have been previously reported. In this work, we present InAs-based QCLs directly grown on Ge. The lasers operate near 14 μm with pulsed threshold current densities as low as 0.8 kA/cm² at room temperature.

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K. Kinjalk, A. Gilbert, A. Remis, Z. Loghmari, L. Cerutti, M. Bahriz, R. Teissier, A. N. Baranov, J.-B. Rodriguez, and E. Tournié "Monolithic integration of InAs-based quantum cascade lasers on germanium", Proc. SPIE 12426, Silicon Photonics XVIII, 1242606 (13 March 2023); https://doi.org/10.1117/12.2649886

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