Paper
1 July 1990 Imaging GaAs vacuum photodiode with 40% quantum efficiency at 530 nm
Kenneth A. Costello, Verle W. Aebi, Hugh MacMillan
Author Affiliations +
Proceedings Volume 1243, Electron Image Tubes and Image Intensifiers; (1990) https://doi.org/10.1117/12.19469
Event: Electronic Imaging: Advanced Devices and Systems, 1990, Santa Clara, CA, United States
Abstract
This paper will describe a high quantum efficiency imaging phosphor diode optimized for 500-700 nm sensitivity. Potential applications for this tube include undersea imaging and detection of 530-nm laser light. The tube is designed to function as a low noise factor optical amplifier. The tube consists of an 18-mm CsO activated GaAs/AlGaAs photocathode and a high resolution P46 phosphor screen enclosed in a Kovar/ceramic vacuum envelope. Measured results for quantum efficiency (QE), MTF, dark current, noise factor, operating life, response time and gain are presented. Finally, the paper discusses the engineering tradeoffs associated with fabricating a GaAs/AlGaAs cathode with high short wavelength QE.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenneth A. Costello, Verle W. Aebi, and Hugh MacMillan "Imaging GaAs vacuum photodiode with 40% quantum efficiency at 530 nm", Proc. SPIE 1243, Electron Image Tubes and Image Intensifiers, (1 July 1990); https://doi.org/10.1117/12.19469
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CITATIONS
Cited by 11 scholarly publications and 7 patents.
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KEYWORDS
Quantum efficiency

Diodes

Gallium arsenide

Image intensifiers

Modulation transfer functions

Absorption

Photons

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