Presentation + Paper
28 April 2023 Hyper-NA EUV lithography: an imaging perspective
Author Affiliations +
Abstract
To print ever smaller features at high contrast projection lithography technology has evolved to shorter wavelength light and larger NA. After enabling the EUV wavelength, the industry is looking into increasing the NA. This study aims to identify EUV specific challenges regarding NA scaling beyond 0.55. We study if EUV imaging can still work at this higher NA and whether specific changes to the mask stack are required. At NA's much higher than 0.55, new effects like polarization will play a role, and larger impact of ultimate mask resolution and material interactions is expected. Already at NA 0.55, a small contrast loss is predicted due to the use of unpolarized light in the scanner. Further increasing the NA will enhance the contrast loss. We study these polarization effects in detail and assess their impact quantitatively for a set of generic building blocks. In addition, the larger incidence angles on mask when the NA increases above 0.55, will further enhance the M3D effects forcing additional mask changes. To enable proper imaging at high incidence angles, new mask architectures, that include changes in the EUV mask absorber and multilayer, will have to be tested using rigorous simulations.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Inhwan Lee, Joern-Holger Franke, Vicky Philipsen, Kurt Ronse, Stefan De Gendt, and Eric Hendrickx "Hyper-NA EUV lithography: an imaging perspective", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 1249405 (28 April 2023); https://doi.org/10.1117/12.2659153
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KEYWORDS
Extreme ultraviolet

Polarization

Light sources and illumination

3D mask effects

Polarizers

3D modeling

Diffraction

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