Modelling of patterning impact from diffraction hot spots in high-NA EUV lenses

Ethan Maguire; Rajiv Sejpal; Bruce W. Smith

doi:10.1117/12.2658756

28 April 2023 Modelling of patterning impact from diffraction hot spots in high-NA EUV lenses

Ethan Maguire, Rajiv Sejpal, Bruce W. Smith

Proceedings Volume 12494, Optical and EUV Nanolithography XXXVI; 124941E (2023) https://doi.org/10.1117/12.2658756
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

SMO sources with pupil fill values as low as 0.15 are targeted for use in High-NA EUV imaging to deliver improved NILS and contrast. These condensed source shapes in combination with high energy sources using 13.5nm light are placing ever increasing photo intensities onto EUV lens and masks. Furthermore, the highly focused diffraction energy of line space and contact patterns results in beam fluences that over time, may cause the multilayer performance to drift from the ideal. In this work a method for predicting imaging impacts in the high-NA, low pupil fill regime for simulated multilayer mirrors is presented.

Citation Download Citation

Ethan Maguire, Rajiv Sejpal, and Bruce W. Smith "Modelling of patterning impact from diffraction hot spots in high-NA EUV lenses", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 124941E (28 April 2023); https://doi.org/10.1117/12.2658756

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