Paper
12 April 2023 Study on the ablation performance of semiconductor lasers on different materials
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Proceedings Volume 12565, Conference on Infrared, Millimeter, Terahertz Waves and Applications (IMT2022); 1256540 (2023) https://doi.org/10.1117/12.2665908
Event: Conference on Infrared, Millimeter, Terahertz Waves and Applications (IMT2022), 2022, Shanghai, China
Abstract
Laser ablation micropropulsion technology has the characteristics of high specific impulse, high thrust ratio and precise thrust control, which is a good choice for many micro/nano satellite power systems such as meteorology, remote sensing and reconnaissance. In order to provide optimal power support for micro-nano satellites and improve the propulsion performance of laser ablation microthrust, in this paper, the ablative material is GAP+3% nano carbon powder, doped with 5%, 8%, 10%, 15% LiAlH4 or 5%, 10%, 20%, 30% AP, respectively. A semiconductor laser with a wavelength of 975nm was used to ablate different doping substances and materials with different doping ratios, and the ablative properties were compared. The mechanism of the difference in ablative properties of different materials was analyzed by electron microscopy. The results show that LiAlH4 and AP can improve the laser ablation performance when they are mixed into GAP as oxidants because of their strong oxidability. When 10% LiAlH4 was added into the material, the average values of specific impulse and single impulse were 235s and 13.36μN·s, respectively. The propulsive performance parameters of 10% doped AP are slightly lower, but the error is smaller and the propulsive performance is more stable.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shaocheng Wang, Sibo Wang, Baoyu Xing, Yanhua Cao, and Dianya Tu "Study on the ablation performance of semiconductor lasers on different materials", Proc. SPIE 12565, Conference on Infrared, Millimeter, Terahertz Waves and Applications (IMT2022), 1256540 (12 April 2023); https://doi.org/10.1117/12.2665908
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KEYWORDS
Doping

Laser ablation

Semiconductor lasers

Crystals

Error analysis

High power lasers

Laser energy

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