Chemically amplified DUV photoresists using a new class of photoacid-generating compounds

Georg Pawlowski; Ralph R. Dammel; Charlet R. Lindley; Hans-Joachim Merrem; Heinz Roeschert; Juergen Lingnau

doi:10.1117/12.20133

1 June 1990 Chemically amplified DUV photoresists using a new class of photoacid-generating compounds

Georg Pawlowski, Ralph R. Dammel, Charlet R. Lindley, Hans-Joachim Merrem, Heinz Roeschert, Juergen Lingnau

Proceedings Volume 1262, Advances in Resist Technology and Processing VII; (1990) https://doi.org/10.1117/12.20133
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

Photoresist materials based on chemical amplification processes show unique properties with respect to their sensitivity, flexibility in design and resolution capability which extends down to the sub half micron region as required for the production of ULSI devices of the next generations. Moreover, as such materials perfectly meet the requirements of DUV exposure tools, it is anticipated that they will be used for the production of 64 MB DRAMs. The photoacid generator (PAG) plays an important role in these complex systems. We report results using new nonionic PAG's, namely a,o'- bisarylsulfonyl diazomethanes j, which on DUV irradition generate sulfonic acids capable of cleaving acid labile dissolution inhibitors in positive tone DUV photoresists or crosslinking acid sensitive methylol compounds in negative tone materials. Their chemistry, photochemistry and relevant physical properties are discussed; first results on DUV sensitive three component photoresist materials using as PAG's are presented. The high sensitivities and contrasts observed in these materials are close to meeting the requirements of the semiconductor industry, which makes them viable candidates for further evaluation.

Citation Download Citation

Georg Pawlowski, Ralph R. Dammel, Charlet R. Lindley, Hans-Joachim Merrem, Heinz Roeschert, and Juergen Lingnau "Chemically amplified DUV photoresists using a new class of photoacid-generating compounds", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20133

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available