Paper
1 August 1990 Direct and indirect transitions in (GaAs)n/(AlAs)n superlattices with n=1-15
Chihiro Hamaguchi, Takeshi Nakazawa, Toshimasa Matsuoka, Tomoki Ohya, Kenji Taniguchi, Hidetoshi Fujimoto, Kensuke Imanishi, Hiromu Kato, Yasutaka Watanabe
Author Affiliations +
Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20856
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Photoreflectance and photoluminescence measurements are carried out to clarify optical properties of (GaAs)/(AlAs) (n = 1-15) short-period superlattices, placing main interest in the crossover of direct-indirect transition and zone-folded weak transition. Photoreflectance spectra of (GaAs)/(A1As) with n < 10 exhibit a weak structure below the main (strong) structure. Photoluminescence peaks appear at the photon energies corresponding to the critical points of these weak and strong structures. Energy band calculations are performed by using the empirical tight-binding method. Calculations of momentum matrix elements between the top valence band and lowest three conduction bands at the I' point show an existence of weakly allowed direct transition below the strongly allowed direct transition edge in (GaAs)/(AlAs)with n < 5. These results strongly suggest that the observed weak structures in the photoreflectance arise from the weakly allowed direct transition, indicating that the conduction band reflects the nature of the zone-folding effect (Xi).
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chihiro Hamaguchi, Takeshi Nakazawa, Toshimasa Matsuoka, Tomoki Ohya, Kenji Taniguchi, Hidetoshi Fujimoto, Kensuke Imanishi, Hiromu Kato, and Yasutaka Watanabe "Direct and indirect transitions in (GaAs)n/(AlAs)n superlattices with n=1-15", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); https://doi.org/10.1117/12.20856
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KEYWORDS
Stereolithography

Electrons

Modulation

Spectroscopy

Gallium arsenide

Solids

Luminescence

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