Fabrication and analysis of zirconium thin films on silicon (Si) by pulsed laser deposition

Zikrulloh Khuzhakulov; Berdimyrat Annamuradov; Salizhan Kylychbekov; Yaran Allamyradov; Inomjon Majidov; Mikhail Khenner; Jasminka Terzic; Danielle Gurgew; Ali Oguz Er

doi:10.1117/12.3001085

12 March 2024 Fabrication and analysis of zirconium thin films on silicon (Si) by pulsed laser deposition

Zikrulloh Khuzhakulov, Berdimyrat Annamuradov, Salizhan Kylychbekov, Yaran Allamyradov, Inomjon Majidov, Mikhail Khenner, Jasminka Terzic, Danielle Gurgew, Ali Oguz Er

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Proceedings Volume 12874, Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2024; 128740C (2024) https://doi.org/10.1117/12.3001085
Event: SPIE LASE, 2024, San Francisco, California, United States

Abstract

Using Pulsed Laser Deposition (PLD), Zr films were deposited on silicon with laser wavelengths of 1064 nm and 532 nm, at substrate temperatures of 25 °C, 300 °C, and 500 °C, and fluences of 0.25, 0.5, and 1.0 J/cm². The 1064 nm wavelength yielded smoother films, with surface roughness growing at higher fluences. The 300 °C temperature was ideal for crystal quality. Analyses through XRD, SEM, and AFM showed unique morphologies due to laser variables. Computations using a thin film growth model matched the empirical data, underscoring the factors critical to Zr film deposition and guiding PLD optimization for superior film quality.

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Zikrulloh Khuzhakulov, Berdimyrat Annamuradov, Salizhan Kylychbekov, Yaran Allamyradov, Inomjon Majidov, Mikhail Khenner, Jasminka Terzic, Danielle Gurgew, and Ali Oguz Er "Fabrication and analysis of zirconium thin films on silicon (Si) by pulsed laser deposition", Proc. SPIE 12874, Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2024, 128740C (12 March 2024); https://doi.org/10.1117/12.3001085

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