Presentation
10 April 2024 Layout simulation for directed self-assembly with chemo-epitaxy methodology
Shibing Wang, Yixiao Zhang, Jiechang Hou, Yuansheng Ma, Daman Khaira, Germain Fenger, Yuyang Sun, Bassem Hamieh, Boaz Alperson, Durairaj Baskaran, Md S. Rahman, Jerome Wandell, Youngjun Her
Author Affiliations +
Abstract
In this paper, we present a rigorous simulation engine for DSA chemo-epitaxy patterning processes. The model can be utilized to predict the post-process patterns for line space and hexagonal hole layouts. Traditional pitch-split and EUV pattern rectification process integration schemes are simulated. The model output for Line Edge Roughness (LER) and Pattern Placement Error (PPE) is compared to the experimental results. Finally, we will explore how to enable DSA-aware process-compliant designs, taking into account cut-mask considerations in the context of design rules.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shibing Wang, Yixiao Zhang, Jiechang Hou, Yuansheng Ma, Daman Khaira, Germain Fenger, Yuyang Sun, Bassem Hamieh, Boaz Alperson, Durairaj Baskaran, Md S. Rahman, Jerome Wandell, and Youngjun Her "Layout simulation for directed self-assembly with chemo-epitaxy methodology", Proc. SPIE 12954, DTCO and Computational Patterning III, 129540W (10 April 2024); https://doi.org/10.1117/12.3010510
Advertisement
Advertisement
KEYWORDS
Directed self assembly

Atomic layer deposition

Extreme ultraviolet

Line edge roughness

Optical lithography

Stochastic processes

Personal protective equipment

Back to Top