The paradigm shift to extreme ultraviolet (EUV) lithography for circuits with sub-10 nm nodes brought about ultrahigh-precision optics and masks in reflective optical paths, creating challenges in the fabrication and metrology of the elements. The reflective optics and masks and ultrafine reticles on wafers offer the impetus of new complimentary CD metrology techniques that offer high-resolution dimensional probes in reflection geometry. In this work, we developed reflective hard X-ray holography imaging as the next-generation metrology tool for EUVL wafers/optics and wafers, without any sample modifications (milling and thinning). We demonstrate the capability of a new surface-reflection-based X-ray holography method for determining 3D dimensions of planar surface patterns supported by simple (but thick) substrates with nanometer resolutions. We anticipate that the holographic imaging technique will immediately benefit the nondestructive CD metrology of EUV reflective optics, masks, and reticles on wafers.
|