Wet etch process for high-resolution DSA patterning for advanced node DRAM

Hsing-Chen Wu; Ming-Chi Liao; Eri Hirahara; Tomohiro Iwaki

doi:10.1117/12.3011188

9 April 2024 Wet etch process for high-resolution DSA patterning for advanced node DRAM

Hsing-Chen Wu, Ming-Chi Liao, Eri Hirahara, Tomohiro Iwaki

Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 1295721 (2024) https://doi.org/10.1117/12.3011188
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

For adopting DSA patterning technology to implementation of upcoming DRAM nodes, a novel, unique, and user-friendly wet etch process was introduced. Our concept performs for good etch selectivity in design which facilitates high resolution patterning, and potentially offers an alternative solution to conventional dry etch techniques especially where CD goes smaller with a higher aspect ratio. This paper will discuss more in detail the concept of wet chemistry and design strategy which were developed for processing PS-b-PMMA (polystyrene-b-polymethyl methacrylate) hole patterns for advanced nodes. Besides, we further open perspectives of our wet etch strategy to new process development which does not require UV cure. Preliminary experiment and successful demonstration on PS-b-PMMA-based hole patterns will also be discussed in this paper.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Hsing-Chen Wu, Ming-Chi Liao, Eri Hirahara, and Tomohiro Iwaki "Wet etch process for high-resolution DSA patterning for advanced node DRAM", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 1295721 (9 April 2024); https://doi.org/10.1117/12.3011188

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