Paper
21 December 2023 A frontside-illuminated single-photon avalanche diode with high photon detection probability
Yihan Zhao, Yang Liu, Zhangming Zhu
Author Affiliations +
Proceedings Volume 12966, AOPC 2023: AI in Optics and Photonics ; 129661E (2023) https://doi.org/10.1117/12.3006826
Event: Applied Optics and Photonics China 2023 (AOPC2023), 2023, Beijing, China
Abstract
A frontside-illuminated single photon avalanche diode based on 110 nm CMOS process is proposed in this paper. The P-well/Deep N well multiplication junction is adopted to enhance the near infrared absorption. To reduce the dark count rate, only the well guard ring is used in the photosensitive region to avoid the defects caused by shallow trench isolation process. The SPAD achieves a DCR of 3.2 cps/μm2 at room temperature, a peak photon detection probability over 40% at 500 nm, and over 3.6% at 905 nm with 2.0 V excess bias voltage. The device we designed is very suitable for LiDAR applications.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yihan Zhao, Yang Liu, and Zhangming Zhu "A frontside-illuminated single-photon avalanche diode with high photon detection probability", Proc. SPIE 12966, AOPC 2023: AI in Optics and Photonics , 129661E (21 December 2023); https://doi.org/10.1117/12.3006826
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KEYWORDS
Single photon avalanche diodes

LIDAR

Plasma display panels

Electric fields

Photodetectors

Light absorption

Near infrared

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