CMOS-compatible low-loss silicon nitride-assisted double-etching silicon O-band edge coupler with 180-nm minimum width

Zhen Wang; Huan Zhang; Jinghao Wang; Chen Hu; Kun Yin; Cun-Zheng Ning

doi:10.1117/12.3008078

21 December 2023 CMOS-compatible low-loss silicon nitride-assisted double-etching silicon O-band edge coupler with 180-nm minimum width

Zhen Wang, Huan Zhang, Jinghao Wang, Chen Hu, Kun Yin, Cun-Zheng Ning

Author Affiliations +

Proceedings Volume 12966, AOPC 2023: AI in Optics and Photonics ; 1296628 (2023) https://doi.org/10.1117/12.3008078
Event: Applied Optics and Photonics China 2023 (AOPC2023), 2023, Beijing, China

Abstract

The edge coupler holds paramount importance as a link bridging optical signals between fibers and silicon-based optoelectronic chips. It surpasses the grating coupler in terms of elevated coupling efficiency, diminished polarization sensitivity, and an expanded bandwidth. However, designing a low-loss silicon edge coupler with a broader minimum width, especially for the O-band, presents substantial obstacles. To surmount these challenges, a silicon nitride (SiN)- assisted double-etching silicon structure with a 180 nm minimum width is adopted in this work. This innovation capitalizes on the double-etching silicon taper, propelling the SiN layer's height to 1.6 μm relative to the bottom of silicon waveguide, resulting in pronounced reduction of silicon leakage loss. By meticulously implementing coupled mode theory, an exceptional coupling efficiency exceeding 0.95 is achieved for both TE and TM polarizations at 1310 nm, facilitating the seamless transition of light from SiN to the thinner silicon waveguide. Further enhancements in curbing silicon leakage loss and shortening device length are achieved through mode analysis-driven designs for both the SiN and silicon taper. Ultimately, these intricate designs culminate in an edge coupler boasting a 180 nm minimum width, with minimal losses of approximately 0.7/1.5 dB for TE/TM polarization and a 0.5-dB bandwidth of around 100 nm within the O band, as demonstrated through simulation while interfacing with standard single-mode fibers.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Zhen Wang, Huan Zhang, Jinghao Wang, Chen Hu, Kun Yin, and Cun-Zheng Ning "CMOS-compatible low-loss silicon nitride-assisted double-etching silicon O-band edge coupler with 180-nm minimum width", Proc. SPIE 12966, AOPC 2023: AI in Optics and Photonics , 1296628 (21 December 2023); https://doi.org/10.1117/12.3008078

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KEYWORDS

Silicon

Silicon nitride

Polarization

Waveguides

Single mode fibers

Refractive index

Fabrication

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