Poster + Paper
18 June 2024 CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance
Rivka Gherabli, Roy Zektzer, Meir Grajower, Joseph Shappir, Christian Frydendahl, Uriel Levy
Author Affiliations +
Conference Poster
Abstract
We experimentally demonstrate a new electro-optic SRAM element fully CMOS compatible. Inspired by the Esaki diode, presenting negative differential resistance (NDR), we designed a new type of NDR diode based on a horizontal PN junction and a region with higher acceptor concentration, P+, in silicon. We embedded the new NDR into a photonic micro-ring resonator to enable a bistable device with electrical and optical readout capabilities. Our device is remarkable for its simplicity, CMOS compatibility and its low power consumption around the nanowatt, but it’s also an important steppingstone on the way to new nonlinear electro-optic and neuromorphic computing structures.
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rivka Gherabli, Roy Zektzer, Meir Grajower, Joseph Shappir, Christian Frydendahl, and Uriel Levy "CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance", Proc. SPIE 13012, Integrated Photonics Platforms III, 130120W (18 June 2024); https://doi.org/10.1117/12.3029908
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KEYWORDS
Electrooptics

Diodes

Microresonators

Signal processing

CMOS technology

Integrated nanophotonics

Silicon photonics

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