Matthew D. McCluskey,1,2 Jesse Huso,2 John S. McCloyhttps://orcid.org/0000-0001-7476-7771,1 Arkka Bhattacharyya,3 Sriram Krishnamoorthy,3 Clint D. Frye,4 Joel B. Varley,4 Lars F. Voss4
1Washington State Univ. (United States) 2Klar Scientific (United States) 3Univ. of California, Santa Barbara (United States) 4Lawrence Livermore National Lab. (United States)
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Photoluminescence (PL) mapping was utilized to investigate damage in β-Ga2O3 epilayers induced by 1064 nm laser pulses. The intensity and position of the intrinsic UV band were determined and plotted as a false-color image. Two types of damage were identified: circular damage and damage cracks. Circular damage shows lower UV PL intensity than the surrounding material with color centers in a “halo” around the damaged region. Damage cracks are aligned with the a and c axes and show higher PL intensity than undamaged material. Defects in the as-grown material were revealed by shifts in the UV band energy.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Matthew D. McCluskey, Jesse Huso, John S. McCloy, Arkka Bhattacharyya, Sriram Krishnamoorthy, Clint D. Frye, Joel B. Varley, Lars F. Voss, "Photoluminescence mapping of laser-damaged β-Ga2O3," Proc. SPIE 13190, Laser-Induced Damage in Optical Materials 2024, 131900A (17 December 2024); https://doi.org/10.1117/12.3032501