Impact of the highest occupied molecular orbital energy level of hole transport materials on the performance of organic light-emitting devices

Jiong Wang; Shengdong Zhang

doi:10.1117/12.3052867

12 December 2024 Impact of the highest occupied molecular orbital energy level of hole transport materials on the performance of organic light-emitting devices

Jiong Wang, Shengdong Zhang

Author Affiliations +

Proceedings Volume 13446, Sixth International Conference on Optoelectronic Science and Materials (ICOSM 2024); 134460L (2024) https://doi.org/10.1117/12.3052867
Event: 6th International Conference on Optoelectronic Science and Materials (ICOSM 2024), 2024, Hefei, China

Abstract

In order to explore the relationship between the highest occupied molecular orbital (HOMO) energy level of hole transport materials (HTM) and the performance of organic light-emitting devices (OLEDs), nine HTMs based on the triphenylamine framework were studied. It is determined through experimental and simulation methods that the device performance is optimized when the HOMO energy level is within the range of -5.40 eV to -5.45 eV. The impedance characteristics of OLEDs also verify that with the increase in the HOMO energy level, the hole injection mechanism gradually shifts from tunneling injection to thermionic emission injection. This study serves as a valuable reference and inspiration for optimizing material matching in OLEDs, thus contributing to the further development of OLED technology.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Jiong Wang and Shengdong Zhang "Impact of the highest occupied molecular orbital energy level of hole transport materials on the performance of organic light-emitting devices", Proc. SPIE 13446, Sixth International Conference on Optoelectronic Science and Materials (ICOSM 2024), 134460L (12 December 2024); https://doi.org/10.1117/12.3052867

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