Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission

James C. Sturm; Casper M. Reaves

doi:10.1117/12.25714

1 April 1991 Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission

James C. Sturm, Casper M. Reaves

Author Affiliations +

Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25714
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Infrared absorption in silicon has been investigated at elevated temperatures. The fundamental absorption process in lightly to moderately doped silicon at 1. 3 and 1. 55 zm have been identified as band-to-band and free carrier mechanisms respectively. The effects of heavy substrate doping on absorption at elevated temperature have also been studied. Significant deviations (10) from transmission vs. temperature as used to measure ternperature in a Rapid Thermal Processing system begin to occur with substrate doping levels of cm3.

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James C. Sturm and Casper M. Reaves "Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25714

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