Characterization of GRIN-SCH-SQW amplifiers

John M. Haake; Mark S. Zediker; Chet L. Balestra; Danny J. Krebs; Joseph L. Levy

doi:10.1117/12.43814

1 July 1991 Characterization of GRIN-SCH-SQW amplifiers

John M. Haake, Mark S. Zediker, Chet L. Balestra, Danny J. Krebs, Joseph L. Levy

Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43814
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

The performance of AlGaAs/GaAs GRIN-SCH-SQW ridge waveguide amplifiers has been characterized as a function of the rib-width, the amplifier bias and the master oscillator injection power. The results of this study revealed that the mode width is weakly dependent on the rib-width, the bias voltage increases with the injection signal level, and the 3 dB gain bandwidth is approximately 45 nm.

Citation Download Citation

John M. Haake, Mark S. Zediker, Chet L. Balestra, Danny J. Krebs, and Joseph L. Levy "Characterization of GRIN-SCH-SQW amplifiers", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43814

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