Low-noise MMIC performance in Kaband using ion implantation technology

J. P. Mondal; T. Contolatis; John J. Geddes; Stan E. Swirhun; Vladimir Sokolov

doi:10.1117/12.44510

1 July 1991 Low-noise MMIC performance in Kaband using ion implantation technology

J. P. Mondal, T. Contolatis, John J. Geddes, Stan E. Swirhun, Vladimir Sokolov

Proceedings Volume 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems; (1991) https://doi.org/10.1117/12.44510
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

The progress made in producing low noise MMICs in Ka-band using an ion-implantation technology is reviewed. The technology is characterized by 3.8 dB noise figure with 14-16 dB gain and is suitable for high volume applications where the cost is to be kept low.

Citation Download Citation

J. P. Mondal, T. Contolatis, John J. Geddes, Stan E. Swirhun, and Vladimir Sokolov "Low-noise MMIC performance in Kaband using ion implantation technology", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); https://doi.org/10.1117/12.44510

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