Electronic/photonic inversion channel technology for optoelectronic ICs and photonic switching

Geoffrey W. Taylor; Paul W. Cooke; Philip A. Kiely; Paul R. Claisse; Stephen K. Sargood; D. P. Doctor; Timothy A. Vang; Patrik A. Evaldsson; Sonu L. Daryanani

doi:10.1117/12.45556

1 August 1991 Electronic/photonic inversion channel technology for optoelectronic ICs and photonic switching

Geoffrey W. Taylor, Paul W. Cooke, Philip A. Kiely, Paul R. Claisse, Stephen K. Sargood, D. P. Doctor, Timothy A. Vang, Patrik A. Evaldsson, Sonu L. Daryanani

Author Affiliations +

Proceedings Volume 1476, Optical Technology for Microwave Applications V; (1991) https://doi.org/10.1117/12.45556
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

A new approach to optoelectronic integration is presented in which all optical and electronic devices are derived from a single crystal growth and a single fabrication sequence. The approach uses a self-aligned inversion channel capable of functioning as an FET or bipolar transistor, a detector, a modulator or a laser in either an analog or a digital mode. Topics discussed include a three-terminal switching laser, a bipolar inversion channel field-effect transistor, a three-terminal analogue laser, an HFET detector, and an HFET optical modulator.

Citation Download Citation

Geoffrey W. Taylor, Paul W. Cooke, Philip A. Kiely, Paul R. Claisse, Stephen K. Sargood, D. P. Doctor, Timothy A. Vang, Patrik A. Evaldsson, and Sonu L. Daryanani "Electronic/photonic inversion channel technology for optoelectronic ICs and photonic switching", Proc. SPIE 1476, Optical Technology for Microwave Applications V, (1 August 1991); https://doi.org/10.1117/12.45556

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