Concentration dependence of diffusivity in polysilicon

M. R. Murti; K. V. Reddy

doi:10.1117/12.57028

1 February 1992 Concentration dependence of diffusivity in polysilicon

M. R. Murti, K. V. Reddy

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57028
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Diffusion of phosphorus in polycrystalline silicon is carried out from POC1₃ source at 1000 degree(s)C for 1 hour. The diffusion profiles were obtained and were analyzed to get diffusivity as a function of concentration.

Citation Download Citation

M. R. Murti and K. V. Reddy "Concentration dependence of diffusivity in polysilicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57028

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