Positron lifetime studies of Al-Si Ohmic contact formed by rapid thermal processing

Revati N. Kulkarni; N. M. Kulkarni; Arvind D. Shaligram

doi:10.1117/12.57032

1 February 1992 Positron lifetime studies of Al-Si Ohmic contact formed by rapid thermal processing

Revati N. Kulkarni, N. M. Kulkarni, Arvind D. Shaligram

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57032
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Due to the involvement of shorter time and energy consumption, rapid thermal processing (RTP) technique finds its success in Semiconductor processing. The Al-Si ohmic contact has been formed and the effect of alloying temperatures between 450 degree(s)C and 550 degree(s)C on this contact has been studied. The nature of the contact is probed well by positron lifetime spectroscopy (PLTS). The measurements are supported by I - V characterization and SEM.

Citation Download Citation

Revati N. Kulkarni, N. M. Kulkarni, and Arvind D. Shaligram "Positron lifetime studies of Al-Si Ohmic contact formed by rapid thermal processing", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57032

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