Properties of GaAs : V Grown by Liquid Phase Epitaxy

Sathya Balasubramanian; Vikram Kumar

doi:10.1117/12.634083

1 February 1992 Properties of GaAs : V Grown by Liquid Phase Epitaxy

Sathya Balasubramanian, Vikram Kumar

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.634083
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Vanadium doping of GaAs during LPE growth gives rise to an electron trap with an activation energy of 0.19 eV and capture cross section of 4 x 1Ocrn.

Citation Download Citation

Sathya Balasubramanian and Vikram Kumar "Properties of GaAs : V Grown by Liquid Phase Epitaxy", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.634083

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