Transport properties of Bi-doped Ge-Se glasses

Pawan Sikka

doi:10.1117/12.56984

1 February 1992 Transport properties of Bi-doped Ge-Se glasses

Pawan Sikka

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56984
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

A series of bulk amorphous samples of Ge₁₅Se_{85 - x}Bi_x (x equals 0, 2, 4, 6, 8, 10) were prepared by the rapid quenching technique. Electrical transport properties such as dc conductivity and thermoelectric power were measured in the temperature range 80 - 350 K. An abrupt increase in the dc conductivity is observed due to the incorporation of Bi into the host Ge-Se system. The conduction sign changed from p to n at 8 < X < 10 as evidenced by the measurement of thermopower. The experimental data is explained in the light of existing theories.

Citation Download Citation

Pawan Sikka "Transport properties of Bi-doped Ge-Se glasses", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56984

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