Recent progress in the growth and characterization of large Ge single crystals for IR optics and microelectronics

Moshe Azoulay; Gabriella Gafni; Michael Roth

doi:10.1117/12.48301

1 November 1991 Recent progress in the growth and characterization of large Ge single crystals for IR optics and microelectronics

Moshe Azoulay, Gabriella Gafni, Michael Roth

Author Affiliations +

Proceedings Volume 1535, Passive Materials for Optical Elements; (1991) https://doi.org/10.1117/12.48301
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

During recent years there has been an increasing demand for large homogeneous Ge single crystals to be used as optical components in high resolution thermal imaging systems. Thus, the authors' research focused on understanding the roles of dopant and stress distribution in large Ge crystals and their influence on the optical performance in the IR region, 8-12 micrometers . More recently, a new application for heavily dope, n-type Ge crystals with low resistivity (~0.1 Ω.cm) and high crystalline perfection (EPD ~5 X 10³cm^-2) has been reported. This paper presents the growth and characterization of large homogeneous Ge single crystals with diameters up to 240 mm for IR optics. Preliminary results on the growth of 75 mm diameter Ge single crystals for substrates preparation are given. These substrates can be used in GaAs solar cells for space applications.

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Moshe Azoulay, Gabriella Gafni, and Michael Roth "Recent progress in the growth and characterization of large Ge single crystals for IR optics and microelectronics", Proc. SPIE 1535, Passive Materials for Optical Elements, (1 November 1991); https://doi.org/10.1117/12.48301

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