InP-based quantum-well infrared photodetectors

Sarath D. Gunapala; Barry F. Levine; D. Ritter; Robert A. Hamm; Morton B. Panish

doi:10.1117/12.49315

1 November 1991 InP-based quantum-well infrared photodetectors

Sarath D. Gunapala, Barry F. Levine, D. Ritter, Robert A. Hamm, Morton B. Panish

Proceedings Volume 1541, Infrared Sensors: Detectors, Electronics, and Signal Processing; (1991) https://doi.org/10.1117/12.49315
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

We demonstrate the first long wavelength quantum well infrared photodetectors (QWIPs) using lattice matched n-doped In0.47As/InP and n-doped 1.3 micrometers InGaAsP/InP materials systems. The responsivity of In0.52Ga0.47As/InP detectors has been found to be larger than that for similar GaAs/AlxGa1 - xAs detectors. In addition we demonstrate the first p-doped In0.53Ga0.47As/InP QWIPs. This detector has the shortest wavelength response, (lambda) p equals 2.7 micrometers , ever achieved in a QWIP and operates at normal incidence.

Citation Download Citation

Sarath D. Gunapala, Barry F. Levine, D. Ritter, Robert A. Hamm, and Morton B. Panish "InP-based quantum-well infrared photodetectors", Proc. SPIE 1541, Infrared Sensors: Detectors, Electronics, and Signal Processing, (1 November 1991); https://doi.org/10.1117/12.49315

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