Fourier transform spectroscopy semiconductor photodetectors peculiarity

Vitaly I. Stafeev; K. O. Boltar; L. D. Saginov

doi:10.1117/12.56387

1 March 1992 Fourier transform spectroscopy semiconductor photodetectors peculiarity

Vitaly I. Stafeev, K. O. Boltar, L. D. Saginov

Proceedings Volume 1575, 8th Intl Conf on Fourier Transform Spectroscopy; (1992) https://doi.org/10.1117/12.56387
Event: Eighth International Conference on Fourier Transform Spectroscopy, 1991, Lubeck-Travemunde, Germany

Abstract

Using Fourier Transform Spectroscopy (FTS), we have measured HgCdTe diodes and resistors photoresponse at wavelengths below the fundamental absorption edge in this semiconductor. This study is inherent to FTS photoresponse and is performed by the long wavelength radiation modulation of the short wavelength photocurrent. Possible physical mechanisms of such modulation are discussed.

Citation Download Citation

Vitaly I. Stafeev, K. O. Boltar, and L. D. Saginov "Fourier transform spectroscopy semiconductor photodetectors peculiarity", Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); https://doi.org/10.1117/12.56387

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