Liquid phase epitaxial growth and characterization of III-V compound semiconductors

B. M. Arora

doi:10.1117/12.637279

16 December 1992 Liquid phase epitaxial growth and characterization of III-V compound semiconductors

B. M. Arora

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.637279
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

In this article we describe the sali ent features of the classical LPE technique with special reference to A1GaAS and InGaAsP. We also review the work of very thin layers for quantum well structures.

Citation Download Citation

B. M. Arora "Liquid phase epitaxial growth and characterization of III-V compound semiconductors", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.637279

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available