Optically activated switching in a ZnSe/GaAs heterostructure

Eric Donkor

doi:10.1117/12.59071

12 May 1992 Optically activated switching in a ZnSe/GaAs heterostructure

Eric Donkor

Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59071
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

A novel structure comprising a number of identical ZnSe/GaAs double heterostructures arranged in series to form a photoconductive switch for high voltages and for high-power frozenwave generation is described. The GaAs front the separate heterostructures are the only components interconnected to form the series arrangement. The switch has low dark current, low onresistance and high switching efficiency. The output characteristics is controllable by external electronic circuitry.

Citation Download Citation

Eric Donkor "Optically activated switching in a ZnSe/GaAs heterostructure", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); https://doi.org/10.1117/12.59071

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available