Electron energy relaxation dynamics in GaAs quantum wells grown on Si: cool-hole effect

Kai Shum; Yoshihiro Takiguchi; Jihad M. Mohaidat; Robert R. Alfano; Hao Qiang; Fred H. Pollak; Hadis Morkoc

doi:10.1117/12.137689

21 October 1992 Electron energy relaxation dynamics in GaAs quantum wells grown on Si: cool-hole effect

Kai Shum, Yoshihiro Takiguchi, Jihad M. Mohaidat, Robert R. Alfano, Hao Qiang, Fred H. Pollak, Hadis Morkoc

Proceedings Volume 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors; (1992) https://doi.org/10.1117/12.137689
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Cool hole effect on hot electron energy relaxation dynamics in GaAs quantum wells grown on Si was investigated using photoreflectance and time-resolved photoluminescence spectroscopies. It was demonstrated that for the quantum wells in which there is a two- dimensional light (heavy) mass hole gas the electron energy relaxation is dominated by electron-hole (electron-longitudinal optical phonon) energy exchange.

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Kai Shum, Yoshihiro Takiguchi, Jihad M. Mohaidat, Robert R. Alfano, Hao Qiang, Fred H. Pollak, and Hadis Morkoc "Electron energy relaxation dynamics in GaAs quantum wells grown on Si: cool-hole effect", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); https://doi.org/10.1117/12.137689

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