Raman spectroscopy study of interdiffusion in Si/SiGe superlattices

Orest J. Glembocki; Sharka M. Prokes

doi:10.1117/12.60450

1 July 1992 Raman spectroscopy study of interdiffusion in Si/SiGe superlattices

Orest J. Glembocki, Sharka M. Prokes

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60450
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The use of Raman spectroscopy to study interdiffusion in SiGe/Si superlattices and multilayers has been considered. We have modeled the interdiffusion process using an error function concentration profile and modeled the Raman scattering spectrum as an integration over this profile. The calculation has been compared to experimental data. The Raman spectra were calculated by appropriately averaging over the diffused interface. We find good agreement between the calculated and measured spectra. The Raman spectra are shown to be sensitive to the interfacial profile.

Citation Download Citation

Orest J. Glembocki and Sharka M. Prokes "Raman spectroscopy study of interdiffusion in Si/SiGe superlattices", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60450

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