Gettering annealing effect on deep-level defect concentration in epitaxial GaAs obtained by chloride method

P. V. Kouchinski; V. M. Lomako; L. N. Shakhlevich; M. S. Rusak; G. N. Troyanova; K. D. Yashin

doi:10.1117/12.131036

1 August 1992 Gettering annealing effect on deep-level defect concentration in epitaxial GaAs obtained by chloride method

P. V. Kouchinski, V. M. Lomako, L. N. Shakhlevich, M. S. Rusak, G. N. Troyanova, K. D. Yashin

Author Affiliations +

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131036
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

Gettering directly included into a technological process of GaAs epitaxial building-up is described. The process of gettering consisted of the formation of TaAs layer of 5-7 micrometers thickness and its annealing in H₂ followed by the etching of the layer. It was found that introduction of gettering annealing into the process of the epitaxial structure build-up leads to a decrease in the concentration of the electrically active deep-level centers.

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P. V. Kouchinski, V. M. Lomako, L. N. Shakhlevich, M. S. Rusak, G. N. Troyanova, and K. D. Yashin "Gettering annealing effect on deep-level defect concentration in epitaxial GaAs obtained by chloride method", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131036

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