Influence of silicon surface carbon contamination on oxide quality and SiO2-Si systems properties

Romuald B. Beck; Tomasz Brozek; Jerzy Ruzyllo

doi:10.1117/12.131037

1 August 1992 Influence of silicon surface carbon contamination on oxide quality and SiO₂-Si systems properties

Romuald B. Beck, Tomasz Brozek, Jerzy Ruzyllo

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131037
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

The contamination of silicon wafers by carbon has become of great interest due to the fact that this effect seems to be basically impossible to avoid during plasma etching and that it is not yet known what ICs parameters it can influence. The results prove that presence of carbon in the silicon subsurface region has enormous influence on the electrophysical properties of the oxide as well as SiO₂-Si interface. Both breakdown and interface properties are degraded. Clear evidence is found that the observed effects are caused by carbon contamination and not by structural damage of the silicon substrate.

Citation Download Citation

Romuald B. Beck, Tomasz Brozek, and Jerzy Ruzyllo "Influence of silicon surface carbon contamination on oxide quality and SiO₂-Si systems properties", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131037

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