X-band GaAs MESFET

Miroslaw Szreter; Boguslaw Boratynski; Bogdan Paszkiewicz; Iwona Zborowska-Lindert

doi:10.1117/12.131010

1 August 1992 X-band GaAs MESFET

Miroslaw Szreter, Boguslaw Boratynski, Bogdan Paszkiewicz, Iwona Zborowska-Lindert

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131010
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

A 1 micrometers gate GaAs MESFET designed for the lower X-band frequencies has been fabricated and characterized. A MOCVD-grown, Se-doped channel layer with 3900 cm²/Vs carrier mobility and a recessed gate structure resulted in a maximum device transconductance of 180 mS/mm. Transistor microwave performance was characterized by the measured gain of 8 dB and noise figure of 3.5 dB at 9.375 GHz. S-parameters measurements in the frequency range 1 divided by 12 GHz allowed for evaluation of small signal equivalent circuit parameters.

Citation Download Citation

Miroslaw Szreter, Boguslaw Boratynski, Bogdan Paszkiewicz, and Iwona Zborowska-Lindert "X-band GaAs MESFET", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131010

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