Paper
23 October 1992 Central wavelength of the electrical injection luminescence spectra of double-heterostructure AlGaAs light-emitting diodes
Masahiro Noguchi, Toshihiko Ibuka, Hisanori Fujita
Author Affiliations +
Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131243
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Abstract
A theoretical study on the central wavelength shifts of double-hetero structure AlGaAs LEDs along with the experimental results are reported herein. All measurements of the spontaneous emission spectra from the AlGaAs active layer are performed with dc and pulsed driving current at a temperature from 253 K to 343 K.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiro Noguchi, Toshihiko Ibuka, and Hisanori Fujita "Central wavelength of the electrical injection luminescence spectra of double-heterostructure AlGaAs light-emitting diodes", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); https://doi.org/10.1117/12.131243
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KEYWORDS
Light emitting diodes

Temperature metrology

Luminescence

Metals

Optoelectronic devices

Tantalum

Zinc

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