High-power 630-640nm GaInP/GaAlInP laser diodes

Szutsun Simon Ou; Jane J. Yang; Michael Jansen; Richard J. Fu; C. J. Hwang

doi:10.1117/12.131264

23 October 1992 High-power 630-640nm GaInP/GaAlInP laser diodes

Szutsun Simon Ou, Jane J. Yang, Michael Jansen, Richard J. Fu, C. J. Hwang

Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131264
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

High-power visible laser diodes operating at 630 - 640 nm have been demonstrated. The devices have a GaInP/GaAlInP single quantum well, graded-index separate confinement heterojunction. For 100-micrometers -broadstripe uncoated lasers, pulsed threshold current of 740 A/cm² and output powers as high as 1.5 W/facet (total 3 W) at room temperature were achieved by optimizing the device cavity length. For 10-micrometers -ridge-waveguide lasers, 40 mW CW output powers with single-longitudinal mode and stable transverse mode have also been demonstrated. We also present, for the first time, high power 635 nm surface-emitting lasers with pulsed output powers of 170 mW.

Citation Download Citation

Szutsun Simon Ou, Jane J. Yang, Michael Jansen, Richard J. Fu, and C. J. Hwang "High-power 630-640nm GaInP/GaAlInP laser diodes", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); https://doi.org/10.1117/12.131264

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