Excitonic stimulated emission of ZnSe: SnS/GaAs MQWs at room temperature

De Zen Shen; Xiwu Fan; Weibiao Wang; Baojun Yang

doi:10.1117/12.182033

5 August 1994 Excitonic stimulated emission of ZnSe: SnS/GaAs MQWs at room temperature

De Zen Shen, Xiwu Fan, Weibiao Wang, Baojun Yang

Proceedings Volume 2321, Second International Conference on Optoelectronic Science and Engineering '94; (1994) https://doi.org/10.1117/12.182033
Event: Optoelectronic Science and Engineering '94: International Conference, 1994, Beijing, China

Abstract

Excitonic stimulated emission in the ZnSe-ZnS multiple quantum wells grown by the metal- organic chemical vapor deposition on GaAs substrates has been studied at room temperature. On the basis of the absorption spectrum and photoluminescence spectra under different excitation intensities measured, the major origin for the excitonic stimulated emissions in the ZnSe-ZnS/GaAs at room temperature obtained here are attributed to the exciton-exciton interaction.

Citation Download Citation

De Zen Shen, Xiwu Fan, Weibiao Wang, and Baojun Yang "Excitonic stimulated emission of ZnSe: SnS/GaAs MQWs at room temperature", Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); https://doi.org/10.1117/12.182033

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