Paper
14 September 1994 Integrated approach to yield enhancement
Martha A. Cockerill, Neil Bryan Henis, Carrie Lundquist, Elizabeth D. Marshall, Gus Raad
Author Affiliations +
Abstract
As integrate circuit geometries, capital for defect detection equipment, and process cycle time decrease simultaneously, prioritizing continuous yield improvement activities becomes essential. One approach for achieving this goal is to integrate yield enhancement resources. The resources available for integration have been failed bit map analysis, inline defect monitoring, molecular contamination detection, and failure analysis. The analytical systems chosen to support these activities have included a scanning electron microscope (JEOL 840FE), an energy dispersive x-ray system (EDAX), a focused ion beam mill (Micrion), a secondary ion mass spectrometer (Cameca IMS3F) -- as well as inspection systems equipped with laser based scanning for pattern anomalies and surface contamination (Tencor Surfscan 7XXX). Combining these techniques and tools facilitates efficient manufacturing process partitioning and root cause analysis leading to continuous improvement.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martha A. Cockerill, Neil Bryan Henis, Carrie Lundquist, Elizabeth D. Marshall, and Gus Raad "Integrated approach to yield enhancement", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186756
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Cited by 1 scholarly publication.
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KEYWORDS
Contamination

Failure analysis

Semiconducting wafers

Inspection

Scanning electron microscopy

Yield improvement

Defect detection

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