Monitoring metallic contamination in the ultra large scale integration (ULSI) era

Norm Armour

doi:10.1117/12.186631

14 September 1994 Monitoring metallic contamination in the ultra large scale integration (ULSI) era

Norm Armour

Proceedings Volume 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing; (1994) https://doi.org/10.1117/12.186631
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

We report on the application of optical methodologies to detect problems related to the deposition of nonparticulate contaminants on and in wafers that occurs during silicon semiconductor wafer processing. At issue is the problem of heavy metal contaminants such as Fe being deposited into the bulk of the wafer. The application of optical methodologies to detect these problems will be examined. We will also show how these techniques can be used for post-processing assessment of contaminant build-up and instrument qualification or monitoring, and how they will be used for future ULSI.

Citation Download Citation

Norm Armour "Monitoring metallic contamination in the ultra large scale integration (ULSI) era", Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994); https://doi.org/10.1117/12.186631

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