Modeling of optical gain in ZnCdSe/ZnMgSSe quantum well lasers

Wenli Huang; Faquir C. Jain

doi:10.1117/12.197253

21 December 1994 Modeling of optical gain in ZnCdSe/ZnMgSSe quantum well lasers

Wenli Huang, Faquir C. Jain

Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197253
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States

Abstract

A model to calculate the optical gain due to excitonic transitions is developed and used to calculate unstrained as well as strained ZnCdSe/ZnMgSSe multiple quantum well (MQW) lasers. Strain induced changes in energy band gap and effective masses of light and heavy holes are included in the gain coefficient and threshold current density calculations. The theoretical simulations are matched with the experimental data on compressively strained ZnCdSe-ZnSSe devices grown on GaAs substrates. Our calculations predict lower threshold current density for the tensile strained Zn_.8Cd_.2Se-Zn_.2Mg_.8S_.03Se_.97 quantum well lasers grown on InP substrates. Unlike the III-V strained layer quantum well lasers, the contribution to gain coefficient due to excitonic transitions is predominant in II-VI systems as the exciton binding energy is larger by a factor of 5. This results in a primary role for excitons in lasing, which has been verified experimentally.

Citation Download Citation

Wenli Huang and Faquir C. Jain "Modeling of optical gain in ZnCdSe/ZnMgSSe quantum well lasers", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); https://doi.org/10.1117/12.197253

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