Calculation of electron-exciton scattering cross sections in semiconducting quantum wells

Yuan Ping Feng; Harold N. Spector

doi:10.1117/12.200985

9 February 1995 Calculation of electron-exciton scattering cross sections in semiconducting quantum wells

Yuan Ping Feng, Harold N. Spector

Proceedings Volume 2362, International Conference on Excitonic Processes in Condensed Matter; (1995) https://doi.org/10.1117/12.200985
Event: Excitonic Processes in Condensed Matter: International Conference, 1994, Darwin, Australia

Abstract

We have theoretically investigated the scattering of excitons by free electrons in a semiconducting quantum well of finite width. The elastic and ionization scattering cross sections have been calculated as a function of the well width using the Born approximation for scattering of excitons by electrons. The behavior of the scattering cross section as a function of energy of relative motion of the electron and the exciton is similar to that previously obtained from 2D calculations for narrow wells. The cross section increases as the well width increases and the relative wave vector of the electron at which the total cross section is a maximum shift to lower values as the well width increases.

Citation Download Citation

Yuan Ping Feng and Harold N. Spector "Calculation of electron-exciton scattering cross sections in semiconducting quantum wells", Proc. SPIE 2362, International Conference on Excitonic Processes in Condensed Matter, (9 February 1995); https://doi.org/10.1117/12.200985

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