Ultrashort-pulse lasers for microstructuring of semiconductors

Hans Opower

doi:10.1117/12.211189

6 June 1995 Ultrashort-pulse lasers for microstructuring of semiconductors

Hans Opower

Proceedings Volume 2426, 9th Meeting on Optical Engineering in Israel; (1995) https://doi.org/10.1117/12.211189
Event: Optical Engineering in Israel: 9th Meeting, 1994, Tel-Aviv, Israel

Abstract

In this paper the term microstructuring is used for two different tasks: (1) The growing of precise epitaxial layers by means of laser generated particle streams. This process may be treated as a laser assisted molecular beam epitaxy. (2) The lateral structuring of the layers by direct ablation with the help of focused laser beams. Up to now the application of lasers in thin film techniques mainly extended to relatively coarse processes like the formation of amorphous or polycrystalline layers on one side and the ablation in a micrometer scale on the other side. In both cases conventionally pulsed lasers, for example excimer lasers or Q- switched solid state lasers, are fulfilling the requirements. A different situation exists when complex semiconductor devices should be constructed. Here a monocrystalline epitaxial growing is absolutely necessary and the structuring needs a precise control of the ablation depths in the order of 100 nanometers or even less.

Citation Download Citation

Hans Opower "Ultrashort-pulse lasers for microstructuring of semiconductors", Proc. SPIE 2426, 9th Meeting on Optical Engineering in Israel, (6 June 1995); https://doi.org/10.1117/12.211189

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