Lithography for ULSI

Shinji Okazaki

doi:10.1117/12.209152

19 May 1995 Lithography for ULSI

Shinji Okazaki

Proceedings Volume 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V; (1995) https://doi.org/10.1117/12.209152
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

ULSI has heavily depended on developments in optical lithography. However, optical lithography is now facing a major obstacle due to exposure wavelength limitations. to overcome this obstacle, not only the use of shorter wavelengths, but also such new technologies as superresolution techniques, electron beams, and X-ray lithography are being intensively investigated. This paper reviews recent developments in these technologies and discusses the major issues. The difference in lithographic activities between Japan and the U.S. is also discussed. Finally, recent development sin lithography for experimental 1-Gb DRAMs are presented.

Citation Download Citation

Shinji Okazaki "Lithography for ULSI", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); https://doi.org/10.1117/12.209152

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