Study on irradiation damage to semiconductor devices by 200 keV electrons caused by backscattered electron assisting LSI inspection (BEASTLI) method

Satoru Yamada; Tsunao Ono; Fumio Mizuno

doi:10.1117/12.209222

22 May 1995 Study on irradiation damage to semiconductor devices by 200-keV electrons caused by backscattered electron assisting LSI inspection (BEASTLI) method

Satoru Yamada, Tsunao Ono, Fumio Mizuno

Author Affiliations +

Proceedings Volume 2439, Integrated Circuit Metrology, Inspection, and Process Control IX; (1995) https://doi.org/10.1117/12.209222
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

Linewidth measurement in quarter micron devices involves some difficult problems, such as charging of photoresist films. Sample charging prevents not only accurate linewidth measurement but also inspection of high aspect ratio holes. Then we proposed the back scattered electron assisting LSI inspection (BEASTLI) method. In BEASTLI, a 200 keV scanning electron beam is used without being influenced by the charging of insulator. As BEASTLI is extremely useful for examining the shape and dimensions of devices, time and labor is saved when optimizing process conditions. However, owing to irradiation damage to semiconductor devices, BEASTLI could not be used as an in-line CD measurement system. In order to realize 'damage free inspection', we evaluated irradiation damage, such as V_TH shift, increase of junction leak current, deterioration of oxide reliability, and hot carrier degradation. We evaluated these characteristics using MOS transistors. As a result of the investigation, we could apply the BEASTLI method for in-line CD measurement.

Citation Download Citation

Satoru Yamada, Tsunao Ono, and Fumio Mizuno "Study on irradiation damage to semiconductor devices by 200-keV electrons caused by backscattered electron assisting LSI inspection (BEASTLI) method", Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); https://doi.org/10.1117/12.209222

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