Study of SiC x-ray mask distortion induced by backetching receding subtractive fabrication process

Shinji Tsuboi; Tsutomu Shoki; Tsuneaki Ohta; Hiroshi Okuyama; Kinya Ashikaga; Yoshio Yamashita; Ryo Ohkubo; Yoichi Yamaguchi; Hiroshi Hoga

doi:10.1117/12.212773

3 July 1995 Study of SiC x-ray mask distortion induced by backetching receding subtractive fabrication process

Shinji Tsuboi, Tsutomu Shoki, Tsuneaki Ohta, Hiroshi Okuyama, Kinya Ashikaga, Yoshio Yamashita, Ryo Ohkubo, Yoichi Yamaguchi, Hiroshi Hoga

Author Affiliations +

Proceedings Volume 2512, Photomask and X-Ray Mask Technology II; (1995) https://doi.org/10.1117/12.212773
Event: Photomask Japan 1995, 1995, Kanagawa, Japan

Abstract

In this paper, we report on the evaluation of the SiC X-ray mask distortion induced by the backetching receding fabrication process by experiment and simulation. The window-opening process for the backetching mask induced pattern displacements of about the same level as measurement accuracy. Large pattern displacements normally induced by the Si backetching process are reduced by using a lower-stress membrane and/or a thicker Si substrate. Simulation shows that a larger-diameter substrate also reduces mask distortion. The one-point anodic bonding technique has been developed, which suppresses the pattern displacements in the last stage of bonding to the frame, to within measurement error (20 nm: 3(sigma) ).

Citation Download Citation

Shinji Tsuboi, Tsutomu Shoki, Tsuneaki Ohta, Hiroshi Okuyama, Kinya Ashikaga, Yoshio Yamashita, Ryo Ohkubo, Yoichi Yamaguchi, and Hiroshi Hoga "Study of SiC x-ray mask distortion induced by backetching receding subtractive fabrication process", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212773

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