Paper
23 August 1995 Aging of photoluminescence and excitation spectra of porous silicon
Tatiana V. Torchinskaya, Nadezhda E. Korsunskaya, Berdishukur R. Dzhumaev, Oleg D. Smijan, B. M. Bulakh
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Abstract
Using photoluminescence, photoluminescence excitation, and secondary ion mass spectroscopy (SIMS) investigations we show in this paper that two luminescence objects with different PL excitation spectra exist in PS. Two stages of photoluminescence aging were observed which are connected with desorption and oxidation processes.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatiana V. Torchinskaya, Nadezhda E. Korsunskaya, Berdishukur R. Dzhumaev, Oleg D. Smijan, and B. M. Bulakh "Aging of photoluminescence and excitation spectra of porous silicon", Proc. SPIE 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV, (23 August 1995); https://doi.org/10.1117/12.217330
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KEYWORDS
Luminescence

Silicon

Picosecond phenomena

Etching

Ions

Absorption

L band

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