Comparison of hydrodynamic and drift diffusion models as applied to interdigitated metal-semiconductor-metal photodetectors

Ali F. Salem; Arlynn W. Smith; Kevin F. Brennan

doi:10.1117/12.221405

26 September 1995 Comparison of hydrodynamic and drift diffusion models as applied to interdigitated metal-semiconductor-metal photodetectors

Ali F. Salem, Arlynn W. Smith, Kevin F. Brennan

Author Affiliations +

Proceedings Volume 2550, Photodetectors and Power Meters II; (1995) https://doi.org/10.1117/12.221405
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

In this paper, we discuss the range of applicability of the drift-diffusion and hydrodynamic models as applied to the study of interdigitated metal-semiconductor-metal photodetectors. The hydrodynamic model is an extension of the standard drift-diffusion technique which determines the electon and hole energies in addition to the carrier concentrations and potential. The hydrodynamic method can properly account for energy dependent phenomena such as nonstationary transport phenomena and thermionic emission currents. The key engineering figure of merit, the time response, is calculated and compared using both models for a 1D device design that closely mimics an InGaAs/AlInAs metal-semiconductor-metal device. Structures incorporating heterobarriers and blocking contacts, wherein differences between the energy dependent and independent models are expected to occur, are examined.

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Ali F. Salem, Arlynn W. Smith, and Kevin F. Brennan "Comparison of hydrodynamic and drift diffusion models as applied to interdigitated metal-semiconductor-metal photodetectors", Proc. SPIE 2550, Photodetectors and Power Meters II, (26 September 1995); https://doi.org/10.1117/12.221405

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