Micromachining and focused ion beam etching of Si for accelerometers

David F. Moore; S. C. Burgess; H.-S. Chiang; H. Klaubert; N. Shibaike; T. Kiriyama

doi:10.1117/12.221282

19 September 1995 Micromachining and focused ion beam etching of Si for accelerometers

David F. Moore, S. C. Burgess, H.-S. Chiang, H. Klaubert, N. Shibaike, T. Kiriyama

Proceedings Volume 2639, Micromachining and Microfabrication Process Technology; (1995) https://doi.org/10.1117/12.221282
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States

Abstract

Silicon microfabricated devices are being developed for reliable low cost sensors including accelerometers with tunnel junction readout. Using bonded silicon on insulator wafers as the starting material, novel structures are made by conventional surface micromachining followed by focused ion beam etching through 7 micrometers thick Si cantilevers at oblique angles to form submicron gaps to be closed by electrostatic actuation.

Citation Download Citation

David F. Moore, S. C. Burgess, H.-S. Chiang, H. Klaubert, N. Shibaike, and T. Kiriyama "Micromachining and focused ion beam etching of Si for accelerometers", Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); https://doi.org/10.1117/12.221282

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