AlGaAsSb/InGaAsSb/GaSb quantum well lasers with separate confinement heterostructures for 2-um operation

Dmitri Z. Garbuzov; Hao Lee; Pamela K. York; Raymond J. Menna; Ramon U. Martinelli; Louis A. DiMarco; S. Yegna Narayan; David R. Capewell; John C. Connolly

doi:10.1117/12.237658

12 April 1996 AlGaAsSb/InGaAsSb/GaSb quantum well lasers with separate confinement heterostructures for 2-um operation

Dmitri Z. Garbuzov, Hao Lee, Pamela K. York, Raymond J. Menna, Ramon U. Martinelli, Louis A. DiMarco, S. Yegna Narayan, David R. Capewell, John C. Connolly

Author Affiliations +

Proceedings Volume 2682, Laser Diodes and Applications II; (1996) https://doi.org/10.1117/12.237658
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Calculation of the optical field distribution in 2 micrometer AlGaAsSb/InGaAsSb/GaSb multiple quantum well (MQW) lasers shows that incorporation of about 100 nm waveguide layers between quantum wells (QW) and cladding layers increases the optical confinement factor and reduces losses caused by mode penetration into doped cladding layers. Structures of this type have been grown by MBE. Both photoluminescence studies and measurements of laser diode parameters demonstrate that excess carriers confined in the waveguide are effectively collected and recombine in the QWs despite the small valence band offset at the interface of the QW and the waveguide, which is expected to be less than kT at 300 K.

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Dmitri Z. Garbuzov, Hao Lee, Pamela K. York, Raymond J. Menna, Ramon U. Martinelli, Louis A. DiMarco, S. Yegna Narayan, David R. Capewell, and John C. Connolly "AlGaAsSb/InGaAsSb/GaSb quantum well lasers with separate confinement heterostructures for 2-um operation", Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); https://doi.org/10.1117/12.237658

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