Paper
10 January 1996 Er3+ phosphate glass optical waveguide amplifiers at 1.5 μm on silicon
Yingchao Yan, Anne Jans Faber, Henk de Waal
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Abstract
RF-sputtering techniques were employed to produce Er-doped phosphate glass films on thermally oxidized silicon wafers. Film compositions were characterized by X-ray photoelectron spectroscopy. As-deposited films showed very low Er luminescence lifetimes. By postannealing of deposited films in pure oxygen, Er photoluminescence emission lifetime of the 4I13/2 - 4I15/2 transition could be increased from 1 - 2 ms to 8 - 9 ms. The long Er lifetime of the deposited films is very promising for achieving an optical gain. A dependence of measured lifetimes on pump power was observed which are related to a up-conversion quenching process. After postannealing, the sputtered waveguides showed relatively low attenuation loss at the potential pumping and signaling wavelengths. The loss spectrum from 700 nm to 1600 nm was measured by two-prism coupling. The films were easy to be patterned by lithography and ridge channel waveguides were developed by argon plasma etching.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yingchao Yan, Anne Jans Faber, and Henk de Waal "Er3+ phosphate glass optical waveguide amplifiers at 1.5 μm on silicon", Proc. SPIE 2695, Functional Photonic and Fiber Devices, (10 January 1996); https://doi.org/10.1117/12.229939
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Cited by 2 scholarly publications.
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KEYWORDS
Waveguides

Erbium

Glasses

Luminescence

Signal attenuation

Optical amplifiers

Silicon

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